Die-to-heatsink interface
Gap pads (5.0–12.0 W/m·K) and phase-change materials that carry heat flux from SiC and GaN dies to the baseplate, maintaining thermal resistance below 0.1 °C·cm²/W through 20,000+ power cycles at Tj,max > 175 °C.
Packaging and interface materials for IGBT, SiC, and GaN power modules, engineered for the junction temperatures and switching speeds of wide-bandgap devices.
SiC MOSFETs operate at junction temperatures above 175 °C and switch at frequencies that concentrate heat flux beyond 200 W/cm² at the die surface. At these levels, the thermal interface material and encapsulant around the module, not the semiconductor itself, determine how hard the device can be pushed and how long it survives. A 10 °C rise in interface temperature can halve the power-cycling lifetime of solder joints and wire bonds.
HeTone supplies high-performance gap pads, phase-change TIMs, and encapsulants from Bergquist, Parker Chomerics, and Henkel, selected and validated for the junction temperatures, dV/dt transients, and thermal-cycling profiles of SiC and GaN power packaging. We support qualification from coupon-level testing through to module-level power cycling.
Licensed materials, the components around them, and the engineering to sign the system off.
Gap pads (5.0–12.0 W/m·K) and phase-change materials that carry heat flux from SiC and GaN dies to the baseplate, maintaining thermal resistance below 0.1 °C·cm²/W through 20,000+ power cycles at Tj,max > 175 °C.
Silicone gels, epoxy underfills, and potting compounds that insulate against partial discharge, damp vibration, and protect wire bonds through aggressive ΔTj power cycling, rated to UL 94 V-0.
Material screening against your module power-cycling profile (ΔTj, ton/toff, target lifetime), with accelerated-ageing data and cross-reference to automotive (AQG 324) and industrial (IEC 62093) reliability standards.
Representative materials we supply for this domain, the exact set is qualified to your design.
Tell us your application and constraints, we will qualify a material system for it.